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1

Saturation of the strong-coupling regime in a semiconductor microcavity: Free-carrier bleaching of cavity polaritons

Houdré, R., Gibernon, J. L., Pellandini, P., Stanley, R. P., Oesterle, U., Weisbuch, C., O’Gorman, J., Roycroft, B., Ilegems, M.

Journal:

Physical Review B

Year:

1995

Language:

english

File:

PDF, 200 KB

english, 1995

2

Infrared Lattice Vibrations and Free-Electron Dispersion in GaN

Barker, A. S., Ilegems, M.

Journal:

Physical Review B

Year:

1973

Language:

english

File:

PDF, 564 KB

english, 1973

3

Observation of the integer quantum Hall effect by magnetic coupling to a Corbino ring

Jeanneret, B., Hall, B. D., Bühlmann, H.-J., Houdré, R., Ilegems, M., Jeckelmann, B., Feller, U.

Journal:

Physical Review B

Year:

1995

Language:

english

File:

PDF, 199 KB

english, 1995

4

In-Situ Monitoring of GaN Growth by Hydride Vapor Phase Epitaxy

D. Martin, J.F. Carlin, V. Wagner, H.J. Bühlmann, M. Ilegems

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 113 KB

english, 2002

5

MBE growth and characterization of MODFET heterostructures using pseudomorphic InGaAs or InAs/GaAs superlattice channels

M.V. Baeta Moreira, M.A. Py, M. Ilegems

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 235 KB

english, 1991

6

Electrical properties of n-type vapor-grown gallium nitride

M. Ilegems, H.C. Montgomery

Journal:

Journal of Physics and Chemistry of Solids

Year:

1973

Language:

english

File:

PDF, 751 KB

english, 1973

7

Room-temperature cavity polaritons in a semiconductor microcavity

Houdré, R., Stanley, R., Oesterle, U., Ilegems, M., Weisbuch, C.

Journal:

Physical Review B

Year:

1994

Language:

english

File:

PDF, 185 KB

english, 1994

8

Structural and electrooptical characteristics of quantum dots emitting at 1.3 μm on gallium arsenide

Fiore, A., Oesterle, U., Stanley, R.P., Houdre, R., Lelarge, F., Ilegems, M., Borri, P., Langbein, W., Birkedal, D., Hvam, J.M., Cantoni, M., Bobard, F.

Journal:

IEEE Journal of Quantum Electronics

Year:

2001

Language:

english

File:

PDF, 210 KB

english, 2001

9

Rate-equation model for coupled-cavity surface-emitting lasers

Badilita, V., Carlin, J.-F., Ilegems, M., Panajotov, K.

Journal:

IEEE Journal of Quantum Electronics

Year:

2004

Language:

english

File:

PDF, 765 KB

english, 2004

10

A quantum cascade laser based on an n-i-p-i superlattice

Faist, J., Muller, A., Beck, M., Hofstetter, D., Blaser, S., Oesterle, U., Ilegems, M.

Journal:

IEEE Photonics Technology Letters

Year:

2000

Language:

english

File:

PDF, 125 KB

english, 2000

11

Continuous-wave dual-wavelength lasing in a two-section vertical-cavity laser

Brunner, M., Gulden, K., Hovel, R., Moser, M., Carlin, J.F., Stanley, R.P., Ilegems, M.

Journal:

IEEE Photonics Technology Letters

Year:

2000

Language:

english

File:

PDF, 48 KB

english, 2000

12

High-efficiency light-emitting diodes at /spl ap/1.3 /spl mu/m using InAs-InGaAs quantum dots

Fiore, A., Oesterle, U., Stanley, R.P., Ilegems, M.

Journal:

IEEE Photonics Technology Letters

Year:

2000

Language:

english

File:

PDF, 61 KB

english, 2000

13

Buried heterostructure quantum cascade lasers with a large optical cavity waveguide

Beck, M., Faist, J., Oesterle, U., Ilegems, M., Gini, E., Melchior, H.

Journal:

IEEE Photonics Technology Letters

Year:

2000

Language:

english

File:

PDF, 55 KB

english, 2000

14

Distributed-feedback quantum cascade lasers emitting in the 9-μm band with InP top cladding layers

Hofstetter, D., Beck, M., Aellen, T., Faist, M., Oesterle, U., Ilegems, M., Gini, E., Melchior, H.

Journal:

IEEE Photonics Technology Letters

Year:

2002

Language:

english

File:

PDF, 75 KB

english, 2002

15

Control of polarization switching in vertical coupled-cavities surface emitting lasers

V. Badilita, J.-F. Carlin, M. Ilegems, M. Brunner, G. Verschaffelt, K. Panajotov

Journal:

IEEE Photonics Technology Letters

Year:

2004

Language:

english

File:

PDF, 369 KB

english, 2004

16

Far-field radiation pattern of red emitting thin-film resonant cavity LEDs

R. Joray, M. Ilegems, R.P. Stanley, W. Schmid, R. Butendeich, R. Wirth, A. Jaeger, K. Streubel

Journal:

IEEE Photonics Technology Letters

Year:

2006

Language:

english

File:

PDF, 176 KB

english, 2006

17

Coupled semiconductor microcavities

Stanley, R. P., HoudreÌ, R., Oesterle, U., Ilegems, M., Weisbuch, C.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 352 KB

english, 1994

18

Dual-wavelength laser emission from a coupled semiconductor microcavity

Pellandini, P., Stanley, R. P., HoudreÌ, R., Oesterle, U., Ilegems, M., Weisbuch, C.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 689 KB

english, 1997

19

Cavity-polariton photoluminescence in semiconductor microcavities: Experimental evidence

Stanley, R. P., Houdré, R., Weisbuch, C., Oesterle, U., Ilegems, M.

Journal:

Physical Review B

Year:

1996

Language:

english

File:

PDF, 228 KB

english, 1996

20

[IEEE 2002 IEEE 18th International Semiconductor Laser Conference. Conference Digest - Garmisch, Germany (29 Sept.-3 Oct. 2002)] IEEE 18th International Semiconductor Laser Conference - Room temperature continuous wave operation of quantum cascade lasers

Hofstetter, D., Beck, M., Aellen, T., Faist, M., Oesterle, U., Ilegems, M., Gini, E., Melchior, H.

Year:

2002

Language:

english

File:

PDF, 126 KB

english, 2002

21

Nonlinear Emission of Semiconductor Microcavities in the Strong Coupling Regime

Houdré, R., Weisbuch, C., Stanley, R. P., Oesterle, U., Ilegems, M.

Journal:

Physical Review Letters

Year:

2000

Language:

english

File:

PDF, 271 KB

english, 2000

22

Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 μm

Markus, A., Fiore, A., Ganière, J. D., Oesterle, U., Chen, J. X., Deveaud, B., Ilegems, M., Riechert, H.

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 322 KB

english, 2002

23

Current transport in relaxation-case GaAs

Ilegems, M., Queisser, H. J.

Journal:

Physical Review B

Year:

1975

Language:

english

File:

PDF, 1.01 MB

english, 1975

24

Thermal lensing effects in small oxide confined vertical-cavity surface-emitting lasers

Brunner, M., Gulden, K., Hövel, R., Moser, M., Ilegems, M.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 308 KB

english, 2000

25

Artificial band discontinuities at GaAs homojunctions

Marsi, M., Houdré, R., Rudra, A., Ilegems, M., Gozzo, F., Coluzza, C., Margaritondo, G.

Journal:

Physical Review B

Year:

1993

Language:

english

File:

PDF, 324 KB

english, 1993

26

Epitaxy of Gallium Nitride by HVPE Using Low Temperature Intermediate Buffer Layers Deposited by MOVPE

V. Wagner, O. Parillaud, H. J. Bühlmann, M. Ilegems

Journal:

physica status solidi (a)

Year:

1999

Language:

english

File:

PDF, 230 KB

english, 1999

27

Influence of the GaN Seed Layer and Growth Parameters on Selective Epitaxy of GaN by HVPE

O. Parillaud, V. Wagner, H. J. Bühlmann, M. Ilegems

Journal:

physica status solidi (a)

Year:

1999

Language:

english

File:

PDF, 187 KB

english, 1999

28

Collisional Broadening of Semiconductor Microcavity Polaritons

L.A. Dunbar, M. Lynch, A.L. Bradley, J.F. Donegan, J. Hegarty, R.P. Stanley, U. Oesterle, R. Houdré, M. Ilegems

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 95 KB

english, 2002

29

Realization of a GaN Laser Diode with Wet Etched Facets

T. Böttcher, Ch. Zellweger, S. Figge, R. Kröger, Ch. Petter, H.-J. Bühlmann, M. Ilegems, P.L. Ryder, D. Hommel

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 165 KB

english, 2002

30

A Mechanistic Study of GaN Laser Lift-Off

T. Bret, V. Wagner, D. Martin, P. Hoffmann, M. Ilegems

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 190 KB

english, 2002

31

Ligand Binding Transmits Conformational Changes across the Membrane-Spanning Region to the Intracellular Side of the 5-HT3 Serotonin Receptor

Erwin Ilegems, Horst Pick, Cédric Deluz, Stephan Kellenberger, Horst Vogel

Journal:

Year:

2005

Language:

english

File:

PDF, 124 KB

english, 2005

32

Formation and optical properties of islands in ultra-thin InAs/InP quantum wells grown by chemical beam epitaxy

R. Houdré, J.F. Carlin, A. Rudra, J. Ling, M. Ilegems

Journal:

Superlattices and Microstructures

Year:

1993

File:

PDF, 130 KB

1993

33

Measurement of cavity polariton dispersion curve

R. Houdré, C. Weisbuch, R.P. Stanley, U. Oesterle, P. Pellandini, M. Ilegems

Journal:

Superlattices and Microstructures

Year:

1994

File:

PDF, 213 KB

1994

34

Phase equilibria and vapor pressures in the Ga + P system

M Ilegems, M.B Panish, J.R Arthur

Journal:

The Journal of Chemical Thermodynamics

Year:

1974

Language:

english

File:

PDF, 1.27 MB

english, 1974

35

Vapor epitaxy of gallium nitride

Journal:

Journal of Crystal Growth

Year:

1972

Language:

english

File:

PDF, 562 KB

english, 1972

36

Phase diagram of the system Al-Ga-P

M. Ilegems, M.B. Panish

Journal:

Journal of Crystal Growth

Year:

1973

Language:

english

File:

PDF, 594 KB

english, 1973

37

Epitaxial growth on optical gratings for distributed feedback GaAs injection lasers

M. Ilegems, H.C. Casey, S. Somekh, M.B. Panish

Journal:

Journal of Crystal Growth

Year:

1975

Language:

english

File:

PDF, 701 KB

english, 1975

38

Growth of GaInAs by chemical beam epitaxy

J.F. Carlin, A. Rudra, R. Houdré, J.L. Staehli, M. Ilegems

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 171 KB

english, 1991

39

High electron density and mobility in single and double planar doped InGaAs/InAlAs heterojunctions on InP

F. Gueissaz, R. Houdré, M. Ilegems

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 424 KB

english, 1991

40

Characterization of InGaAs and InAlAs layers on InP by four-crystal high resolution X-ray diffraction and wedge transmission electron microscopy

R. Houdré, F. Gueissaz, M. Gailhanou, J.-D. Ganiére, A. Rudra, M. Ilegems

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 407 KB

english, 1991

41

Effect of growth interruptions on ultra-thin InAs/InP quantum wells grown by chemical beam epitaxy

J.F. Carlin, A. Rudra, R. Houdré, P. Ruterana, M. Ilegems

Journal:

Journal of Crystal Growth

Year:

1992

Language:

english

File:

PDF, 259 KB

english, 1992

42

Growth of GaInAs(P) and GaInAsP/GaInAs MQW structures by CBE

A. Rudra, J.F. Carlin, P. Ruterana, M. Gailhanou, J.L. Staehli, M. Ilegems

Journal:

Journal of Crystal Growth

Year:

1992

Language:

english

File:

PDF, 497 KB

english, 1992

43

Quantitative study of the incorporation of group III elements in chemical beam epitaxy of GaInAsP alloys

J.F. Carlin, A. Rudra, M. Ilegems

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 672 KB

english, 1993

44

One-step growth of buried heterostructures by chemical beam epitaxy over patterned InP substrates

A. Rudra, H. Sugiura, J. Ling, J.M. Bonard, J.D. Ganière, M. de Fays, D. Araujo, M. Ilegems

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 479 KB

english, 1994

45

Dynamics of island formation in the growth of InAs/InP quantum wells

A. Rudra, R. Houdré, J.F. Carlin, M. Ilegems

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 306 KB

english, 1994

46

Pseudomorphic InGaAsIn(Ga)P bidimensional electron gas grown by chemical beam epitaxy

J.F. Carlin, A. Rudra, M. Ilegems

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 412 KB

english, 1996

47

Molecular beam epitaxy growth of an ultrahigh finesse microcavity

U. Oesterle, R.P. Stanley, R. Houdré, M. Gailhanou, M. Ilegems

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 395 KB

english, 1995

48

Growth temperature dependence of the interfacet migration in chemical beam epitaxy of InP on non-planar substrates

C. Amano, A. Rudra, P. Grunberg, J.F. Carlin, M. Ilegems

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 526 KB

english, 1996

49

The optical properties of Be, Mg and Zn-diffused gallium phosphide

P.J. Dean, M. Ilegems

Journal:

Journal of Luminescence

Year:

1971

Language:

english

File:

PDF, 1.64 MB

english, 1971

50

Donor-acceptor pair recombination in GaN

R. Dingle, M. Ilegems

Journal:

Solid State Communications

Year:

1971

Language:

english

File:

PDF, 421 KB

english, 1971

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